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    • China silicon carbide susceptor Manufacturer, Supplier, Factory

    As a professional silicon carbide susceptor manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable silicon carbide susceptor made in China, you can leave us a message.

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    • SiC Coated Top Plate for LPE PE2061S

      SiC Coated Top Plate for LPE PE2061S

      VeTek Semiconductor is a leading SiC Coated Top Plate for LPE PE2061S manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC Coated Top Plate for LPE PE2061S designed specifically for LPE silicon epitaxy reactor. This SiC Coated Top Plate for LPE PE2061S is the top together with barrel susceptor.This CVD SiC coated plate boasts high purity, excellent thermal stability, and uniformity, making it suitable for growing high-quality epitaxial layers.We welcome you to visit our factory in China.
    • SiC Coated Epi Susceptor

      SiC Coated Epi Susceptor

      As the top domestic manufacturer of silicon carbide and tantalum carbide coatings, VeTek Semiconductor is able to provide precision machining and uniform coating of SiC Coated Epi Susceptor, effectively controlling the purity of coating and product below 5ppm. The product life is comparable to that of SGL. Welcome to inquire us.
    • Disc Susceptor

      Disc Susceptor

      Vetek Semiconductor provide edge-cutting Graphite Disc Susceptor. The SiC coating provides superior thermal stability, excellent chemical resistance, and enhanced process uniformity, ensuring optimal performance and reliability. Experience the next level of efficiency and precision with Vetek Semiconductor's SiC-coated Disc Susceptor.
    • Silicon Carbide Shower Head

      Silicon Carbide Shower Head

      VeTek Semiconductor is a leading manufacturer and supplier of Silicon Carbide Shower Head products in China. SiC Shower Head has excellent high temperature tolerance, chemical stability, thermal conductivity and good gas distribution performance, which can achieve uniform gas distribution and improve film quality. Therefore, it is usually used in high temperature processes such as chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes. Welcome your further consultation.
    • Porous SiC Ceramic Chuck

      Porous SiC Ceramic Chuck

      Vetek Semiconductor offers Porous SiC Ceramic Chuck widely used in wafer processing technology, transfer and other links, suitable for bonding, scribing, patch, polishing and other links, laser processing. Our Porous SiC Ceramic Chuck has Ultra-strong vacuum adsorption, high flatness and high purity meet the needs of most semiconductor industries.Welcome to inquiry us.
    • SiC Sealing Part

      SiC Sealing Part

      As an advanced SiC Sealing Part product manufacturer and factory in China. VeTek Semiconducto SiC Sealing Part is a high-performance sealing component widely used in semiconductor processing and other extreme high temperature and high pressure processes. Welcome your further consultation.
    • Related Blog
    • Reviews

    • How to solve the problem of sintering cracks in silicon carbide ceramics? - VeTek semiconductor

      This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

    • ALD Atomic Layer Deposition Recipe

      Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

    • Tantalum carbide technology breakthrough, SiC epitaxial pollution reduced by 75%?

      Recently, the German research institute Fraunhofer IISB has made a breakthrough in the research and development of tantalum carbide coating technology, and developed a spray coating solution that is more flexible and environmentally friendly than the CVD deposition solution, and has been commercialized.

    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • Principles and Technology of Physical Vapor Deposition Coating (1/2) - VeTek Semiconductor

      Vacuum coating includes film material vaporization, vacuum transportation and thin film growth. According to the different film material vaporization methods and transportation processes, vacuum coating can be divided into two categories: PVD and CVD.

    • What is the difference between epitaxy and ALD?

      The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

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