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    • China SiC Epitaxial Layers Manufacturer, Supplier, Factory

    As a professional SiC Epitaxial Layers manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable SiC Epitaxial Layers made in China, you can leave us a message.

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      TaC Coated Guide Ring

      VeTek Semiconductor is a leading TaC Coated Guide Ring manufacturer and innovator in China.We have been specialized in ceramic coating for many years.TaC Coated Guide Ring are primarily used to guide and control airflow, enhancing the yield of single crystal growth. Welcome to inquiry us for further information.
    • Tantalum Carbide Coating Cover

      Tantalum Carbide Coating Cover

      VeTek Semiconductor is a leading manufacturer and innovator of Tantalum Carbide Coating Cover in China. We focus on providing high-purity, high-temperature resistant tantalum carbide products. Our tantalum carbide coated cover have excellent performance and reliability, and can effectively protect materials in extremely high temperature and corrosive environments. We look forward to becoming your long-term partner in China.
    • SiC Cantilever Paddle

      SiC Cantilever Paddle

      VeTek Semiconductor's SiC Cantilever Paddle is a very high performance product. Our SiC Cantilever Paddle is usually used in heat treatment furnaces for handling and supporting silicon wafers, chemical vapor deposition (CVD) and other processing processes in semiconductor manufacturing processes. The high temperature stability and high thermal conductivity of SiC material ensure high efficiency and reliability in the semiconductor processing process. We are committed to providing high-quality products at competitive prices and look forward to becoming your long-term partner in China.
    • GaN Epitaxial Graphite Susceptor for G5

      GaN Epitaxial Graphite Susceptor for G5

      VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality GaN Epitaxial Graphite susceptor For G5. we have established long-term and stable partnerships with numerous well-known companies at home and abroad, earning the trust and respect of our customers.
    • Three-petal Graphite Crucible

      Three-petal Graphite Crucible

      VeTek Semiconductor's Three-petal Graphite Crucible is a special container designed for the thermal treatment of semiconductor materials, especially for the production of single crystals. It plays a vital role in controlling the growth of single crystal structures required for the manufacture of semiconductor devices. VeTek Semiconductor's looks forward to becoming your long-term partner in China.
    • Contiguous Wafer Boat

      Contiguous Wafer Boat

      Vetek Semiconductor Contiguous Wafer Boat is an advanced equipment for semiconductor processing. The product structure of Contiguous Wafer Boat is carefully designed to ensure efficient processing and production of precision wafers. Vetek Semiconductor is committed to providing excellent technology and product solutions for the semiconductor industry. We look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Uses of solid silicon carbide

      Solid silicon carbide has excellent properties such as high temperature stability, high hardness, good abrasion resistance, and good chemical stability, so it has a wide range of applications. The following are some applications of solid silicon carbide:

    • Different technical routes of SiC epitaxial growth furnace

      Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

    • Based on 8-inch silicon carbide single crystal growth furnace technology

      Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

    • Chip manufacturing: A process flow of MOSFET

      The chip manufacturing process includes photolithography,etching, diffusion, thin film, ion implantation, chemical mechanical polishing, cleaning, etc. This article roughly explains how these processes are integrated in sequence to manufacture a MOSFET.

    • GaN-based low-temperature epitaxy technology

      This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

    • Thermal Field Design for SiC Single Crystal Growth

      With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

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