China SiC Epitaxial Layers Manufacturer, Supplier, Factory

Thin film deposition is vital in chip manufacturing, creating micro devices by depositing films under 1 micron thick via CVD, ALD, or PVD. These processes build semiconductor components through alternating conductive and insulating films.

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

With the theme of "How to achieve high quality crystal growth? - SiC crystal growth furnace", this blog conducts a detailed analysis from four dimensions: the basic principle of silicon carbide crystal growth furnace, the structure of the silicon carbide crystal growth furnace, technical difficulties of silicon carbide crystal growth furnace, and raw materials for growing high-quality SiC crystals.

From the application perspective of SiC single crystal growth, this article compares the basic physical parameters of TaC coating and SIC coating, and explains the basic advantages of TaC coating over SiC coating in terms of high temperature resistance, strong chemical stability, reduced impurities, and lower costs.

The article analyzes the specific challenges faced by the CVD TaC coating process for SiC single crystal growth during semiconductor processing, such as material source and purity control, process parameter optimization, coating adhesion, equipment maintenance and process stability, environmental protection and cost control, as well as the corresponding industry solutions.