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    • China SiC coated Dummy wafer Manufacturer, Supplier, Factory

    As a professional SiC coated Dummy wafer manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable SiC coated Dummy wafer made in China, you can leave us a message.

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    • TaC Coating Planetary Susceptor

      TaC Coating Planetary Susceptor

      VeTek Semiconductor'TaC Coating Planetary Susceptor is an exceptional product for Aixtron epitaxy equipment. The robust TaC coating provides excellent high-temperature resistance and chemical inertness. This unique combination ensures reliable performance and long service life, even in demanding environments. VeTek is committed to providing high-quality products and serving as a long-term partner in the Chinese market with competitive pricing.
    • SiC Coated ICP Etching Carrier

      SiC Coated ICP Etching Carrier

      VeTek Semiconductor's SiC Coated ICP Etching Carrier is designed for the most demanding epitaxy equipment applications. Made of high-quality ultra-pure graphite material, our SiC Coated ICP Etching Carrier has a highly flat surface and excellent corrosion resistance to withstand the harsh conditions during handling. The high thermal conductivity of the SiC coated carrier ensures even heat distribution for excellent etching results. VeTek Semiconductor looks forward to building a long-term partnership with you.
    • LPE SI EPI Susceptor Set

      LPE SI EPI Susceptor Set

      VeTek Semiconductor is a leading LPE Si Epi Susceptor Set manufacturer and innovator in China.We have been specialized in SiC coating and TaC coating for many years.We offer a LPE Si Epi Susceptor Set designed specifically for LPE PE2061S 4'' wafers. The matching degree of graphite material and SiC coating is good, the uniformity is excellent, and the life is long, which can improve the yield of epitaxial layer growth during the LPE (Liquid Phase Epitaxy) process.We welcome you to visit our factory in China.
    • TaC Coated Graphite Wafer Carrier

      TaC Coated Graphite Wafer Carrier

      VeTek Semiconductor is a leading TaC Coated Graphite Wafer Carrier manufacturer and innovator in China.We have been specialized in SiC and TaC coating for many years.Our TaC coated graphite wafer carrier has a higher temperature resistance and wear-resistant. We look forward to becoming your long-term partner in China.
    • Tantalum Carbide Guide Ring

      Tantalum Carbide Guide Ring

      VeTek Semiconductor is a professional manufacturer and leader of Tantalum Carbide Guide Ring products in China. Our Tantalum Carbide (TaC) Guide Ring is a high-performance ring component made of tantalum carbide, which is commonly used in semiconductor processing equipment, especially in high-temperature and highly corrosive environments such as CVD, PVD, etching and diffusion. VeTek Semiconductor is committed to providing advanced technology and product solutions for the semiconductor industry, and welcomes your further inquiries.
    • CVD SiC coating graphite susceptor

      CVD SiC coating graphite susceptor

      VeTek Semiconductor CVD SiC coating graphite susceptor is one of the important components in the semiconductor industry such as epitaxial growth and wafer processing. It is used in MOCVD and other equipment to support the processing and handling of wafers and other high-precision materials. VeTek Semiconductor has China's leading SiC coated graphite susceptor and TaC Coated Graphite Susceptor production and manufacturing capabilities, and looks forward to your consultation.
    • Related Blog
    • Reviews

    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • Characteristics of silicon epitaxy

      High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

    • Application of carbon-based thermal field materials in silicon carbide crystal growth

      Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

    • The Problems in the Etching Process

      Etching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, designing reasonable lithography layout, and selecting appropriate etching mask materials and process conditions.

    • Diamond - the future star of semiconductors

      Diamond, a potential fourth-generation "ultimate semiconductor," is gaining attention in semiconductor substrates due to its exceptional hardness, thermal conductivity, and electrical properties. While its high cost and production challenges limit its use, CVD is the preferred method. Despite doping and large-area crystal challenges, diamond holds promise.

    • Silicon(Si) epitaxy preparation technology

      Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

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