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Diamond, a potential fourth-generation "ultimate semiconductor," is gaining attention in semiconductor substrates due to its exceptional hardness, thermal conductivity, and electrical properties. While its high cost and production challenges limit its use, CVD is the preferred method. Despite doping and large-area crystal challenges, diamond holds promise.

Solid silicon carbide has excellent properties such as high temperature stability, high hardness, good abrasion resistance, and good chemical stability, so it has a wide range of applications. The following are some applications of solid silicon carbide:

This article analyzes the product characteristics and application scenarios of tantalum carbide coating and silicon carbide coating from multiple perspectives.

Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.

This article mainly introduces the product types, product characteristics and main functions of TaC Coating in semiconductor processing, and makes a comprehensive analysis and interpretation of TaC Coating products as a whole.

Electron beam evaporation is a highly efficient and widely used coating method compared to resistance heating, which heats the evaporation material with an electron beam, causing it to vaporize and condense into a thin film.