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  • Pressureless Sintering SiC

    • China Pressureless Sintering SiC Manufacturer, Supplier, Factory

    As a professional Pressureless Sintering SiC manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Pressureless Sintering SiC made in China, you can leave us a message.

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    • SiC Coating Cover Segments Inner

      SiC Coating Cover Segments Inner

      At VeTek Semiconductor, we specialize in the research, development, and industrialization of CVD SiC coating and CVD TaC coating. One exemplary product is the SiC Coating Cover Segments Inner, which undergoes extensive processing to achieve a highly precise and densely coated CVD SiC surface. This coating demonstrates exceptional resistance to high temperatures and provides robust corrosion protection. Feel free to contact us for any inquiries.
    • CVD SiC coating Dummy wafer

      CVD SiC coating Dummy wafer

      As a leading Chinese sic wafer manufacturers and suppliers, VeTek Semiconductor CVD SiC coating Dummy wafer is a specialized tool in semiconductor manufacturing, mainly used for the purpose of silicon wafer testing and wafer testing process. Your further inquiries are welcome.
    • Wafer Handling Robotic Arm

      Wafer Handling Robotic Arm

      Vetek Semiconductor thermal spraying technology plays a vital role in the application of wafer handling robotic arms, especially in semiconductor manufacturing environments that require high precision and high cleanliness. This technology significantly improves the durability, reliability and work efficiency of the equipment by coating special materials on the surface of the wafer handling robotic arm. Welcome to inquiry us.
    • TaC Coating Tube

      TaC Coating Tube

      As a professional TaC Coating Tube manufacturer and supplier in China, VeTek Semiconductor's TaC coating tube is a key component for the successful growth of silicon carbide single crystals. With its high temperature resistance, chemical inertness and excellent performance, it ensures the production of high-quality crystals with consistent results. Trust our innovative solutions to enhance your PVT method SiC crystal growth process and achieve excellent results.Welcome to inquiry us.
    • Monocrystalline pulling Crucible

      Monocrystalline pulling Crucible

      Vetek Semiconductor recognizes the vital importance of Monocrystalline Pulling Crucibles in the process of achieving monocrystalline silicon ingot growth, a fundamental step in semiconductor device manufacturing. Our crucibles are intricately engineered to meet the rigorous requirements set by the semiconductor industry. Vetek Semiconductor is committed to producing and supplying crystal growth graphite crucibles that excel in performance, quality, and cost-effectiveness to meet the evolving needs of the industry.Welcome to inquiry us.
    • SiC Coated Graphite Crucible Deflector

      SiC Coated Graphite Crucible Deflector

      VeTek Semiconductor have many years of experience in production of high quality SiC coated graphite crucible deflector. We have own laboratory for material research and development, can support your custom designs with superior quality. we welcome you to visit our factory for more discussion.
    • Related Blog
    • Reviews

    • Roll up! Two major manufacturers are about to mass produce 8-inch silicon carbide

      As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.

    • Silicon(Si) epitaxy preparation technology

      Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

    • What is step-controlled epitaxial growth？

    • Silicon carbide nanomaterials

      Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

    • Thermal Field Design for SiC Single Crystal Growth

      With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

    • Based on 8-inch silicon carbide single crystal growth furnace technology

      Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

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