SiC Coated Top Plate for LPE PE2061S

VeTek Semiconductor is a leading SiC Coated Top Plate for LPE PE2061S manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC Coated Top Plate for LPE PE2061S designed specifically for LPE silicon epitaxy reactor. This SiC Coated Top Plate for LPE PE2061S is the top together with barrel susceptor.This CVD SiC coated plate boasts high purity, excellent thermal stability, and uniformity, making it suitable for growing high-quality epitaxial layers.We welcome you to visit our factory in China.

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Product Description

VeTek Semiconductor is a professional China SiC Coated Top Plate for LPE PE2061S manufacturer and supplier.

The VeTeK Semiconductor SiC Coated Top Plate for LPE PE2061S in silicon epitaxial equipment, used in conjunction with a barrel type body susceptor to support and hold the epitaxial wafers (or substrates) during the epitaxial growth process.

The SiC Coated Top Plate for LPE PE2061S is typically made of high-temperature stable graphite material. VeTek Semiconductor carefully considers factors such as thermal expansion coefficient when selecting the most suitable graphite material, ensuring a strong bond with the silicon carbide coating.

The SiC Coated Top Plate for LPE PE2061S exhibits excellent thermal stability and chemical resistance to withstand the high-temperature and corrosive environment during epitaxy growth. This ensures long-term stability, reliability, and protection of the wafers.

In silicon epitaxial equipment, the primary function of the whole CVD SiC coated reactor is to support the wafers and provide a uniform substrate surface for the growth of epitaxial layers. Additionally, it allows for adjustments in the position and orientation of the wafers, facilitating control over temperature and fluid dynamics during the growth process to achieve desired growth conditions and epitaxial layer characteristics.

VeTek Semiconductor's products offer high precision and uniform coating thickness. The incorporation of a buffer layer also extends the product's lifespan. in silicon epitaxial equipment, used in conjunction with a barrel-type body susceptor to support and hold the epitaxial wafers (or substrates) during the epitaxial growth process.

SEM data and structure of CVD SIC films

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1