China MOCVD epitaxial wafer susceptor Manufacturer, Supplier, Factory

Diamond, a potential fourth-generation "ultimate semiconductor," is gaining attention in semiconductor substrates due to its exceptional hardness, thermal conductivity, and electrical properties. While its high cost and production challenges limit its use, CVD is the preferred method. Despite doping and large-area crystal challenges, diamond holds promise.

This article mainly discusses the respective process advantages and differences of Molecular Beam Epitaxy process and Metal-organic chemical vapour deposition technologies.

Vacuum coating includes film material vaporization, vacuum transportation and thin film growth. According to the different film material vaporization methods and transportation processes, vacuum coating can be divided into two categories: PVD and CVD.

Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

Thin film deposition is vital in chip manufacturing, creating micro devices by depositing films under 1 micron thick via CVD, ALD, or PVD. These processes build semiconductor components through alternating conductive and insulating films.

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.