MOCVD epitaxial wafer susceptor

VeTek Semiconductor has been engaged in the semiconductor epitaxial growth industry for a long time and has rich experience and process skills in MOCVD epitaxial wafer susceptor products. Today, VeTek Semiconductor has become China's leading MOCVD epitaxial wafer susceptor manufacturer and supplier, and the wafer susceptors it provides have played an important role in the manufacturing of GaN epitaxial wafers and other products.

Send Inquiry

Product Description

MOCVD epitaxial wafer susceptor is a high-performance epitaxial wafer susceptor designed for MOCVD (Metal-Organic Chemical Vapor Deposition) equipment. The susceptor is made of SGL graphite material and coated with silicon carbide coating, which combines the high thermal conductivity of graphite with the excellent high temperature and corrosion resistance of SiC, and is suitable for the harsh working environment of high temperature, high pressure and corrosive gas during the epitaxial growth of semiconductors.

SGL graphite material has excellent thermal conductivity, which ensures that the temperature of the epitaxial wafer is evenly distributed during the growth process and improves the quality of the epitaxial layer. The coated SiC coating enables the susceptor to withstand high temperatures of more than 1600℃ and adapt to the extreme thermal environment in the MOCVD process. In addition, the SiC coating can effectively resist high-temperature reaction gases and chemical corrosion, extend the service life of the susceptor, and reduce pollution.

VeTekSemi’s MOCVD epitaxial wafer susceptor can be used as a replacement for accessories of MOCVD equipment suppliers such as Aixtron. MOCVD Susceptor for Epitaxial Growth

● Size: Can be customized according to customer needs (standard size available).

● Carrying capacity: Can carry multiple or even more than 50 epitaxial wafers at a time (depending on the susceptor size).

● Surface treatment: SiC coating, corrosion resistance, oxidation resistance.

It is an important accessory for a variety of epitaxial wafer growth equipment

● Semiconductor industry: Used for the growth of epitaxial wafers such as LEDs, laser diodes, and power semiconductors.

● Optoelectronics industry: Supports the epitaxial growth of high-quality optoelectronic devices.

● High-end material research and development: Applied to the epitaxial preparation of new semiconductors and optoelectronic materials.

Depending on the customer's MOCVD equipment type and production needs, VeTek Semiconductor provides customized services, including susceptor size, material, surface treatment, etc., to ensure that the most suitable solution is provided to customers.

CVD SIC FILM CRYSTAL STRUCTURE

Basic physical properties of CVD SiC coating

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
SiC coating Density	3.21 g/cm³
SiC coating Hardness	2500 Vickers hardness（500g load）
Grain Size	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K^-1
Thermal Expansion(CTE)	4.5×10^-6K^-1