China LPE SiC EPI Halfmoon Manufacturer, Supplier, Factory

Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.

Electron beam evaporation is a highly efficient and widely used coating method compared to resistance heating, which heats the evaporation material with an electron beam, causing it to vaporize and condense into a thin film.

CVD TAC coating is a process for forming a dense and durable coating on a substrate (graphite). This method involves depositing TaC onto the substrate surface at high temperatures, resulting in a tantalum carbide (TaC) coating with excellent thermal stability and chemical resistance.

8-inch SiC epitaxial furnace and homoepitaxial process research

The semiconductor manufacturing process involves eight steps: wafer processing, oxidation, lithography, etching, thin film deposition, interconnection, testing, and packaging. Silicon from sand is processed into wafers, oxidized, patterned, and etched for high-precision circuits.

This article mainly introduces the product types, product characteristics and main functions of MOCVD Susceptor in semiconductor processing, and makes a comprehensive analysis and interpretation of MOCVD Susceptor products as a whole.