China LED lC epitaxy Manufacturer, Supplier, Factory

Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

This article describes the physical parameters and product characteristics of VeTek Semiconductor's Porous Graphite, as well as its specific applications in semiconductor processing.

The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

As a leading manufacturer in the SiC industry, Sanan Optoelectronics' related dynamics have received widespread attention in the industry. Recently, Sanan Optoelectronics disclosed a series of latest developments, involving 8-inch transformation, new substrate factory production, establishment of new companies, government subsidies and other aspects.