China High purity quartz Diffusion Tube Manufacturer, Supplier, Factory

The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

CVD TAC coating is a process for forming a dense and durable coating on a substrate (graphite). This method involves depositing TaC onto the substrate surface at high temperatures, resulting in a tantalum carbide (TaC) coating with excellent thermal stability and chemical resistance.

What is High-purity porous graphite ? - Vetek , This blog mainly introduces the specific working principle of High-purity porous graphite for SiC single crystal growth by PVT method.

Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

This blog takes "What is SiC-coated graphite susceptor?" as its theme, and discusses it from the perspectives of Epitaxial layer and its equipment, Importance of SiC coated graphite susceptor in CVD equipment, SiC Coating technology, Market competition and Vetek Semiconductor’s technological innovation.