China Graphite Soft Felt Manufacturer, Supplier, Factory

Tantalum carbide (TaC) coatings are widely used in the semiconductor field, mainly for epitaxial growth reactor components, single crystal growth key components, high-temperature industrial components, MOCVD system heaters and wafer carriers.Its excellent high temperature resistance and corrosion resistance can improve equipment durability, yield and crystal quality, reduce energy consumption and improve stability.

This article mainly discusses the respective process advantages and differences of Molecular Beam Epitaxy process and Metal-organic chemical vapour deposition technologies.

Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

During the SiC epitaxial growth process, SiC coated graphite suspension failure may occur. This paper conducts a rigorous analysis of the failure phenomenon of SiC coated graphite suspension, which mainly includes two factors: SiC epitaxial gas failure and SiC coating failure.

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

This article describes the physical parameters and product characteristics of VeTek Semiconductor's Porous Graphite, as well as its specific applications in semiconductor processing.