China Crystal growth crucible Manufacturer, Supplier, Factory

This article describes the physical parameters and product characteristics of VeTek Semiconductor's Porous Graphite, as well as its specific applications in semiconductor processing.

This article describes that LED substrate is the largest application of sapphire, as well as the main methods of preparing sapphire crystals: growing sapphire crystals by the Czochralski method, growing sapphire crystals by the Kyropoulos method, growing sapphire crystals by the guided mold method, and growing sapphire crystals by the heat exchange method.

Vacuum coating includes film material vaporization, vacuum transportation and thin film growth. According to the different film material vaporization methods and transportation processes, vacuum coating can be divided into two categories: PVD and CVD.

The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

Tantalum carbide (TaC) coatings are widely used in the semiconductor field, mainly for epitaxial growth reactor components, single crystal growth key components, high-temperature industrial components, MOCVD system heaters and wafer carriers.Its excellent high temperature resistance and corrosion resistance can improve equipment durability, yield and crystal quality, reduce energy consumption and improve stability.

Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.