Porous Graphite with TaC Coated

Porous Graphite with TaC Coated is an advanced semiconductor processing material provided by VeTek Semiconductor. Porous Graphite with TaC Coated combines the advantages of porous graphite and tantalum carbide (TaC) coating, with good thermal conductivity and gas permeability. VeTek Semiconductor is committed to providing quality products at competitive prices, and we look forward to being your long-term partner in China.

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Product Description

VeTek Semiconductor is China manufacturer & supplier who mainly produces Porous Graphite with TaC Coated with many years of experience. Hope to build business relationship with you.

VeTek Semiconductor Porous Graphite with TaC Coated material is a revolutionary semiconductor manufacturing material that perfectly combines porous graphite with tantalum carbide (TaC) coating. This Porous Graphite with TaC Coated material has excellent permeability and high porosity, with a maximum porosity of 75%, setting an international industry record. High-purity TaC coating not only enhances the corrosion and wear resistance of porous graphite, but also provides an additional layer of protection, effectively solving challenges such as processing and corrosion.

The use of TaC-coated porous graphite can significantly improve the efficiency and quality of the semiconductor manufacturing process. Its excellent permeability ensures the stability of the material under high temperature conditions and effectively controls the increase of carbon impurities. At the same time, the high porosity design provides better gas diffusion performance to help maintain a pure growth environment.

We are committed to providing customers with excellent Porous Graphite with TaC Coated materials to meet the needs of the semiconductor manufacturing industry. Whether in research laboratories or industrial production, this advanced material can help you achieve excellent performance and reliability. Contact us today to learn more about this revolutionary material and start your journey of innovation to drive semiconductor manufacturing.

PVT method SiC Crystal Growth

PVT method SiC Crystal Growth working diagram

Product parameter of the Porous Graphite with TaC Coated

Physical properties of TaC coating
Coating Density	14.3 (g/cm³)
Specific emissivity	0.3
Thermal expansion coefficient	6.3 10^-6/K
TaC coating Hardness (HK)	2000 HK
Resistance	1×10^-5 Ohm*cm
Thermal stability	<2500℃
Graphite size changes	-10~-20um
Coating thickness	≥20um typical value (35um±10um)