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This article introduces the product characteristics of TaC coating, the specific process of preparing TaC coating products using CVD process, and introduces VeTek Semiconductor's most popular TaC coating.

The semiconductor manufacturing process involves eight steps: wafer processing, oxidation, lithography, etching, thin film deposition, interconnection, testing, and packaging. Silicon from sand is processed into wafers, oxidized, patterned, and etched for high-precision circuits.

The article explains the temperature gradient in a single-crystal furnace. It covers the static and dynamic heat fields during crystal growth, the solid-liquid interface, and the temperature gradient's role in solidification.

SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.