China annealing in semiconductor fabrication Manufacturer, Supplier, Factory

The article explains the temperature gradient in a single-crystal furnace. It covers the static and dynamic heat fields during crystal growth, the solid-liquid interface, and the temperature gradient's role in solidification.

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

SiC has high hardness, thermal conductivity, and corrosion resistance, making it ideal for semiconductor manufacturing. CVD SiC coating is created through chemical vapor deposition, providing high thermal conductivity, chemical stability, and a matching lattice constant for epitaxial growth. Its low thermal expansion and high hardness ensure durability and precision, making it essential in applications like wafer carriers, preheating rings, and more. VeTek Semiconductor specializes in custom SiC coatings for diverse industry needs.

This article analyzes the reasons why SiC coating a key core material for SiC epitaxial growth and focuses on the specific advantages of SiC coating in the semiconductor industry.

As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.

VeTek Semiconductor's Porous Tantalum Carbide, as a new generation of SiC crystal growth material, has many excellent product properties and plays a key role in a variety of semiconductor processing technologies.