China annealing in semiconductor fabrication Manufacturer, Supplier, Factory

The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

The Taiko process thins silicon wafers using its principles, technical advantages and process origins.

This article describes the physical parameters and product characteristics of VeTek Semiconductor's Porous Graphite, as well as its specific applications in semiconductor processing.

CVD SiC is a high-purity silicon carbide material manufactured by chemical vapor deposition. It is mainly used for various components and coatings in semiconductor processing equipment. The following content is an introduction to the product classification and core functions of CVD SiC

According to overseas news, two sources revealed on June 24 that ByteDance is working with US chip design company Broadcom to develop an advanced artificial intelligence (AI) computing processor, which will help ByteDance ensure an adequate supply of high-end chips amid tensions between China and the United States.