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  • Aixtron Satellite wafer carrier

    • China Aixtron Satellite wafer carrier Manufacturer, Supplier, Factory

    As a professional Aixtron Satellite wafer carrier manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Aixtron Satellite wafer carrier made in China, you can leave us a message.

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      Contiguous Wafer Boat

      Vetek Semiconductor Contiguous Wafer Boat is an advanced equipment for semiconductor processing. The product structure of Contiguous Wafer Boat is carefully designed to ensure efficient processing and production of precision wafers. Vetek Semiconductor is committed to providing excellent technology and product solutions for the semiconductor industry. We look forward to becoming your long-term partner in China.
    • Silicon Carbide Epitaxy Wafer Carrier

      Silicon Carbide Epitaxy Wafer Carrier

      VeTek Semiconductor is a leading customized Silicon Carbide Epitaxy Wafer Carrier supplier in China.We have been specialized in advanced material more than 20 years.We offer a Silicon Carbide Epitaxy Wafer Carrier for carrying SiC substrate, growing SiC epitaxy layer in SiC epitaxial reactor. This Silicon Carbide Epitaxy Wafer Carrier is an important SiC coated part of halfmoon part, high temperature resistance, oxidation resistance, wear resistance. We welcome you to visit our factory in China.
    • silicon carbide ceramic coating heater

      silicon carbide ceramic coating heater

      VeTek Semiconductor is a professional silicon carbide ceramic coating heater manufacturer in China. The silicon carbide ceramic coating heater is mainly designed for the high temperature and harsh environment of semiconductor manufacturing. Its ultra-high melting point, excellent corrosion resistance and outstanding thermal conductivity determine the indispensability of this product in the semiconductor production process. We sincerely hope to establish a long-term business relationship with you.
    • CVD SiC Shower Head

      CVD SiC Shower Head

      VeTek Semiconductor is a leading CVD SiC Shower Head manufacturer and innovator in China.We have been specialized in SiC material for many years.CVD SiC Shower Head is chosen as a focusing ring material due to its excellent thermochemical stability, high mechanical strength and resistance to plasma erosion.We look forward to becoming your long-term partner in China.
    • CVD SiC Coating Nozzle

      CVD SiC Coating Nozzle

      Vetek Semiconductor’s CVD SiC Coating Nozzles are crucial components used in the LPE SiC epitaxy process for depositing silicon carbide materials during semiconductor manufacturing. These nozzles are typically made of high-temperature and chemically stable silicon carbide material to ensure stability in harsh processing environments. Designed for uniform deposition, they play a key role in controlling the quality and uniformity of epitaxial layers grown in semiconductor applications.Looking forward to setting up long term cooperation with you.
    • Rapid Thermal Annealing Susceptor

      Rapid Thermal Annealing Susceptor

      VeTek Semiconductor is a leading Rapid Thermal Annealing Susceptor manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer Rapid Thermal Annealing Susceptor with high quality,high temperature resistance,super thin.We welcome you to visit our factory in China.
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      In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

    • The Development History of 3C SiC

      Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

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      As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.

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      Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

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      This article introduces the product characteristics of TaC coating, the specific process of preparing TaC coating products using CVD process, and introduces VeTek Semiconductor's most popular TaC coating.

    • Thermal Field Design for SiC Single Crystal Growth

      With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

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