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  • TaC Coated Cover

    • China TaC Coated Cover Manufacturer, Supplier, Factory

    As a professional TaC Coated Cover manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable TaC Coated Cover made in China, you can leave us a message.

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    • High Purity SiC Cantilever Paddle

      High Purity SiC Cantilever Paddle

      VeTek Semiconductor is a leading manufacturer and innovator of High Purity SiC Cantilever Paddle in China. High Purity SiC Cantilever Paddles are commonly used in semiconductor diffusion furnaces as wafer transfer or loading platforms. VeTek Semiconductor is committed to providing advanced technology and product solutions for the semiconductor industry. We look forward to becoming your long-term partner in China.
    • TaC coated wafer susceptor

      TaC coated wafer susceptor

      eTek Semiconductor TaC Coated Wafer Susceptor is a graphite tray coated with tantalum carbide for silicon carbide epitaxial growth to improve wafer quality and performance. VeTek is selected because of its advanced coating technology and durable solutions to ensure excellent SiC epitaxy results and extended susceptor life, welcome your further inquiries.
    • Monocrystalline pulling Crucible

      Monocrystalline pulling Crucible

      Vetek Semiconductor recognizes the vital importance of Monocrystalline Pulling Crucibles in the process of achieving monocrystalline silicon ingot growth, a fundamental step in semiconductor device manufacturing. Our crucibles are intricately engineered to meet the rigorous requirements set by the semiconductor industry. Vetek Semiconductor is committed to producing and supplying crystal growth graphite crucibles that excel in performance, quality, and cost-effectiveness to meet the evolving needs of the industry.Welcome to inquiry us.
    • Porous SiC Vacuum Chuck

      Porous SiC Vacuum Chuck

      As a professional Porous SiC Vacuum Chuck manufacturer and supplier in China, Vetek Semiconductor's Porous SiC Vacuum Chuck is widely used in key components of semiconductor manufacturing equipment, especially when it comes to CVD and PECVD processes. Vetek Semiconductor specializes in manufacturing and supplying high-performance Porous SiC Vacuum Chuck. Welcome your further inquiries.
    • SiC Crystal Growth Porous Graphite

      SiC Crystal Growth Porous Graphite

      As the leading SiC Crystal Growth Porous Graphite manufacturer and leader in China's semiconductor industry, VeTek Semiconductor has been focusing on various Porous Graphite products for many years, such as Porous graphite crucible, High Purity Porous Graphite, SiC Crystal Growth Porous Graphite, Porous Graphite with TaC Coated's investment and R&D, our Porous Graphite products have won high praise from European and American customers. We sincerely look forward to becoming your partner in China.
    • ALD Susceptor

      ALD Susceptor

      VeTek Semiconductor is a professional manufacturer of ALD Susceptor, CVD SiC coating, CVD TAC COATING graphite base in China. Vetek Semiconductor jointly developed and produced SiC-coated ALD planetary bases with ALD system manufacturers to meet the high requirements of the ALD process and evenly distribute the air flow on the substrate. We look forward to further cooperation with you.
    • Related Blog
    • Reviews

    • What is semiconductor epitaxy process?

      It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

    • How to solve the problem of sintering cracks in silicon carbide ceramics? - VeTek semiconductor

      This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

    • Italy's LPE's 200mm SiC epitaxial technology progress

      This article introduces the latest developments in the newly designed PE1O8 hot-wall CVD reactor of the Italian company LPE and its ability to perform uniform 4H-SiC epitaxy on 200mm SiC.

    • Material of silicon carbide epitaxy

      The material of silicon carbide epitaxial layer is silicon carbide, which is usually used to manufacture high-power electronic devices and LEDs. It is widely used in the semiconductor industry due to its excellent thermal stability, mechanical strength and high electrical conductivity.

    • ALD Atomic Layer Deposition Recipe

      Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

    • Characteristics of silicon epitaxy

      High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

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