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    • China single crystal pulling Manufacturer, Supplier, Factory

    As a professional single crystal pulling manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable single crystal pulling made in China, you can leave us a message.

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      VeTek Semiconductor, a reputable CVD SiC coating manufacturer, brings you the cutting-edge SiC Coating Collector Center in Aixtron G5 MOCVD system. These SiC Coating Collector Center are meticulously designed with high purity graphite and boast an advanced CVD SiC coating, ensuring high temperature stability, corrosion resistance, high purity.Looking forward to cooperating with you!
    • High purity graphite ring

      High purity graphite ring

      High purity graphite ring is suitable for GaN epitaxial growth processes. Their excellent stability and superior performance have made them widely used. VeTek Semiconductor produces and manufactures world-leading High purity graphite ring to help the GaN epitaxy industry continue to progress. VeTekSemi looks forward to becoming your partner in China.
    • 4H N-type SiC Substrate

      4H N-type SiC Substrate

      As a professional 4H N-type SiC Substrate manufacturer and supplier in China, Vetek Semiconductor 4H N-type SiC Substrate aims to provide advanced technology and product solutions for the semiconductor industry. Our 4H N-type SiC Wafer is carefully designed and manufactured with high reliability to meet the demanding requirements of the semiconductor industry. We welcome your further inquiries.
    • SiC coating ALD susceptor

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      As a professional SiC coating ALD susceptor manufacturer and supplier in China, VeTek Semiconductor's SiC coating ALD susceptor is a support component specifically used in the atomic layer deposition (ALD) process. It plays a key role in the ALD equipment, ensuring the uniformity and precision of the deposition process. We believe that our ALD Planetary Susceptor products can bring you high-quality product solutions.
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      In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

    • What is semiconductor epitaxy process?

      It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • Uses of solid silicon carbide

      Solid silicon carbide has excellent properties such as high temperature stability, high hardness, good abrasion resistance, and good chemical stability, so it has a wide range of applications. The following are some applications of solid silicon carbide:

    • How to prepare CVD TaC coating?

      This article introduces the product characteristics of CVD TaC coating, the process of preparing CVD TaC coating using the CVD method, and the basic method for surface morphology detection of the prepared CVD TaC coating.

    • 8-inch SiC epitaxial furnace and homoepitaxial process research

      8-inch SiC epitaxial furnace and homoepitaxial process research

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