China single crystal pulling Manufacturer, Supplier, Factory

From the application perspective of SiC single crystal growth, this article compares the basic physical parameters of TaC coating and SIC coating, and explains the basic advantages of TaC coating over SiC coating in terms of high temperature resistance, strong chemical stability, reduced impurities, and lower costs.

The material of silicon carbide epitaxial layer is silicon carbide, which is usually used to manufacture high-power electronic devices and LEDs. It is widely used in the semiconductor industry due to its excellent thermal stability, mechanical strength and high electrical conductivity.

This article first introduces the molecular structure and physical properties of TaC, and focuses on the differences and applications of sintered tantalum carbide and CVD tantalum carbide, as well as VeTek Semiconductor's popular TaC coating products.

With the development of the solar photovoltaic industry, diffusion furnaces and LPCVD furnaces are the main equipment for the production of solar cells, which directly affect the efficient performance of solar cells. Based on the comprehensive product performance and usage cost, silicon carbide ceramic materials have more advantages in the field of solar cells than quartz materials. The application of silicon carbide ceramic materials in the photovoltaic industry can greatly help photovoltaic enterprises reduce auxiliary material investment costs, improve product quality and competitiveness. The future trend of silicon carbide ceramic materials in the photovoltaic field is mainly towards higher purity, stronger load-bearing capacity, higher loading capacity, and lower cost.

Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.

The semiconductor manufacturing process involves eight steps: wafer processing, oxidation, lithography, etching, thin film deposition, interconnection, testing, and packaging. Silicon from sand is processed into wafers, oxidized, patterned, and etched for high-precision circuits.