GaN epitaxial susceptor

As a leading GaN epitaxial susceptor supplier and manufacturer in China, VeTek semiconductor GaN epitaxial susceptor is a high-precision susceptor designed for GaN epitaxial growth process, used to support epitaxial equipment such as CVD and MOCVD. In the manufacturing of GaN devices (such as power electronic devices, RF devices, LEDs, etc.), GaN epitaxial susceptor carries the substrate and achieves high-quality deposition of GaN thin films under high temperature environment. Welcome your further inquiry.

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Product Description

The GaN epitaxial susceptor is designed for the gallium nitride (GaN) epitaxial growth process and is suitable for advanced epitaxial technologies such as high-temperature chemical vapor deposition (CVD) and metal organic chemical vapor deposition (MOCVD). The susceptor is made of high-purity, high-temperature resistant materials to ensure excellent stability under high temperature and multiple gas environments, meeting the demanding process requirements of advanced semiconductor devices, RF devices, and LED fields.

In addition, VeTek Semiconductor's GaN epitaxial susceptor has the following product features:

● Material composition

High-purity graphite: SGL graphite is used as the substrate, with excellent and stable performance.

Silicon carbide coating: provides extremely high thermal conductivity, strong oxidation resistance and chemical corrosion resistance, suitable for the growth needs of high-power GaN devices. It shows excellent durability and long service life in harsh environments such as high-temperature CVD and MOCVD, which can significantly reduce production costs and maintenance frequency.

● Customization

Customized size: VeTek Semiconductor supports customized service according to customer needs, the size of the susceptor and wafer hole can be customized.

● Operating temperature range

VeTeksemi GaN epitaxial susceptor could withstand temperatures up to 1200°C, ensuring high temperature uniformity and stability.

● Applicable equipment

Our GaN epi susceptor is Compatible with mainstream MOCVD equipment such as Aixtron, Veeco, etc., suitable for high-precision GaN epitaxial process.

VeTeksemi has always been committed to providing customers with the most suitable and excellent GaN epitaxial susceptor products and looks forward to becoming your long-term partner. VeTek Semiconductor provides you with professional products and services to help you achieve greater results in the epitaxy industry.

CVD SIC FILM CRYSTAL STRUCTURE

Basic physical properties of CVD SiC coating

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
SiC coating Density	3.21 g/cm³
SiC coating Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K^-1
Thermal Expansion(CTE)	4.5×10^-6K^-1