China Silicon carbide Vacumm-chuck Manufacturer, Supplier, Factory

As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.

This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).

Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

In an era of rapid technological development, 3D printing, as an important representative of advanced manufacturing technology, is gradually changing the face of traditional manufacturing. With the continuous maturity of technology and the reduction of costs, 3D printing technology has shown broad application prospects in many fields such as aerospace, automobile manufacturing, medical equipment, and architectural design, and has promoted the innovation and development of these industries.

High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.