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Silicon-based GaN Epitaxial Susceptor, In order to meet the increasing requirement of customers both home and aboard, we'll keep carrying forward the enterprise spirit of "Quality, Creativity, Efficiency and Credit" and strive to top the current trend and lead fashion. We warmly welcome you to visit our company and make cooperation.

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    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

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  • Why is SiC coating a key core material for SiC epitaxial growth?

    This article analyzes the reasons why SiC coating a key core material for SiC epitaxial growth and focuses on the specific advantages of SiC coating in the semiconductor industry.

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