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As a professional Pyrolytic Carbon Coating manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Pyrolytic Carbon Coating made in China, you can leave us a message.

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    Wafer Carrier Tray

    Vetek Semiconductor specializes in partnering with its customers to produce custom designs for Wafer Carrier Tray. Wafer Carrier tray can be designed for use in CVD silicon epitaxy, III-V epitaxy, and III-Nitride epitaxy, Silicon carbide epitaxy. Please contact Vetek semiconductor regarding your susceptor requirements.
  • SiC Coated Graphite Barrel Susceptor

    SiC Coated Graphite Barrel Susceptor

    VeTek Semiconductor SiC Coated Graphite Barrel Susceptor is a high-performance wafer tray designed for semiconductor epitaxy processes, offering excellent thermal conductivity, high-temperature and chemical resistance, a high-purity surface, and customizable options to enhance production efficiency. Welcome your further inquiry.
  • CVD SiC coating ring

    CVD SiC coating ring

    The CVD SiC coating ring is one of the important parts of the halfmoon parts. Together with other parts, it forms the SiC epitaxial growth reaction chamber. VeTek Semiconductor is a professional CVD SiC coating ring manufacturer and supplier. According to the customer's design requirements, we can provide the corresponding CVD SiC coating ring at the most competitive price. VeTek Semiconductor looks forward to becoming your long-term partner in China.
  • Porous Graphite with TaC Coated

    Porous Graphite with TaC Coated

    Porous Graphite with TaC Coated is an advanced semiconductor processing material provided by VeTek Semiconductor. Porous Graphite with TaC Coated combines the advantages of porous graphite and tantalum carbide (TaC) coating, with good thermal conductivity and gas permeability. VeTek Semiconductor is committed to providing quality products at competitive prices, and we look forward to being your long-term partner in China.
  • MOCVD LED Epi Susceptor

    MOCVD LED Epi Susceptor

    VeTek Semiconductor is a professional manufacturer of MOCVD LED Epi Susceptor, ALD Planetary Susceptor, TaC Coated Graphite Susceptor in China. VeTek Semiconductor's MOCVD LED Epi Susceptor is designed for demanding epitaxial equipment applications. Its high thermal conductivity, chemical stability and durability are key factors to ensure a stable epitaxial growth process and high-quality semiconductor film production. We look forward to further cooperation with you.
  • Solid SiC wafer carrier

    Solid SiC wafer carrier

    VeTek Semiconductor's solid SiC wafer carrier is designed for high temperature and corrosion resistant environments in semiconductor epitaxial processes and is suitable for all types of wafer manufacturing processes with high purity requirements. VeTek Semiconductor is a leading wafer carrier supplier in China and looks forward to becoming your long-term partner in the semiconductor industry.
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  • What is hot pressed SiC ceramics?

    Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

  • Principles and Technology of Physical Vapor Deposition Coating (1/2) - VeTek Semiconductor

    Vacuum coating includes film material vaporization, vacuum transportation and thin film growth. According to the different film material vaporization methods and transportation processes, vacuum coating can be divided into two categories: PVD and CVD.

  • Characteristics of silicon epitaxy

    High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

  • Application of carbon-based thermal field materials in silicon carbide crystal growth

    Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

  • Sanan Optoelectronics Co., Ltd.: 8-inch SiC chips are expected to be put into production in December!

    As a leading manufacturer in the SiC industry, Sanan Optoelectronics' related dynamics have received widespread attention in the industry. Recently, Sanan Optoelectronics disclosed a series of latest developments, involving 8-inch transformation, new substrate factory production, establishment of new companies, government subsidies and other aspects.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

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