China PECVD (Plasma-Enhanced Chemical Vapor Deposition) Manufacturer, Supplier, Factory

This article describes the physical parameters and product characteristics of VeTek Semiconductor's Porous Graphite, as well as its specific applications in semiconductor processing.

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

Recently, the German research institute Fraunhofer IISB has made a breakthrough in the research and development of tantalum carbide coating technology, and developed a spray coating solution that is more flexible and environmentally friendly than the CVD deposition solution, and has been commercialized.

It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.