VeTek semiconductor is a leading manufacturer of Tantalum Carbide Coating materials for the semiconductor industry. Our main product offerings include CVD tantalum carbide coating parts, sintered TaC coating parts for SiC crystal growth or semiconductor epitaxy process. Passed ISO9001, VeTek Semiconductor has good control on quality. VeTek Semiconductor is dedicated to become innovator in Tantalum Carbide Coating industry through ongoing research and development of iterative technologies.
The main products are TaC Coated Guide Ring, CVD TaC coated three-petal guide ring, Tantalum Carbide TaC Coated Halfmoon, CVD TaC coating planetary SiC epitaxial susceptor, Tantalum Carbide Coating Ring, Tantalum Carbide Coated Porous Graphite, TaC Coating Rotation Susceptor, Tantalum Carbide Ring, TaC Coating Rotation Plate, TaC coated wafer susceptor, TaC Coated Deflector Ring, CVD TaC Coating Cover, TaC Coated Chuck etc., the purity is below 5ppm, can meet customer requirements.
TaC coating graphite is created by coating the surface of a high-purity graphite substrate with a fine layer of tantalum carbide by a proprietary Chemical Vapor Deposition (CVD) process.The advantage is showed in below picture:
The tantalum carbide (TaC) coating has gained attention due to its high melting point of up to 3880°C, excellent mechanical strength, hardness, and resistance to thermal shocks, making it an attractive alternative to compound semiconductor epitaxy processes with higher temperature requirements, such as Aixtron MOCVD system and LPE SiC epitaxy process.It also has a wide application in PVT method SiC crystal growth process.
● Temperature stability
● Ultra high purity
● Resistance to H2, NH3, SiH4,Si
● Resistance to thermal stock
● Strong adhesion to graphite
● Conformal coating coverage
● Size up to 750 mm diameter(The only manufacturer in China reaches this size)
● Inductive heating susceptor
● Resistive heating element
● Heat shield
Physical properties of TaC coating | |
Density | 14.3 (g/cm³) |
Specific emissivity | 0.3 |
Thermal expansion coefficient | 6.3 10-6/K |
Hardness (HK) | 2000 HK |
Resistance | 1×10-5 Ohm*cm |
Thermal stability | <2500℃ |
Graphite size changes | -10~-20um |
Coating thickness | ≥20um typical value (35um±10um) |
Element | Atomic percent | |||
Pt. 1 | Pt. 2 | Pt. 3 | Average | |
C K | 52.10 | 57.41 | 52.37 | 53.96 |
Ta M | 47.90 | 42.59 | 47.63 | 46.04 |