China Three-petal Graphite Crucible Manufacturer, Supplier, Factory

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

The four most powerful graphite manufacturers in the world: SGL, Toyo Tanso, Tokai Carbon, Mersen and their corresponding typical graphite and application areas.

As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.

This article mainly introduces the product types, product characteristics and main functions of MOCVD Susceptor in semiconductor processing, and makes a comprehensive analysis and interpretation of MOCVD Susceptor products as a whole.

Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.