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    • China SiC coating Heating Element Manufacturer, Supplier, Factory

    As a professional SiC coating Heating Element manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable SiC coating Heating Element made in China, you can leave us a message.

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    • Porous SiC Ceramic Chuck

      Porous SiC Ceramic Chuck

      Vetek Semiconductor offers Porous SiC Ceramic Chuck widely used in wafer processing technology, transfer and other links, suitable for bonding, scribing, patch, polishing and other links, laser processing. Our Porous SiC Ceramic Chuck has Ultra-strong vacuum adsorption, high flatness and high purity meet the needs of most semiconductor industries.Welcome to inquiry us.
    • Glassy Carbon Coated Graphite Crucible

      Glassy Carbon Coated Graphite Crucible

      VeTek Semiconductor is a leading supplier of customized Glassy Carbon Coated Graphite Crucible in China, specializing in glassy carbon materials for many years.Our Glassy Carbon Coated Graphite Crucible is meticulously engineered to deliver exceptional performance specifically for E-beam Guns, silicon single crystal pulling, epitaxy. It offers enhanced durability against scratching and other friction, also reduces the generation of dust.Welcome to visit us.
    • VEECO MOCVD Heater

      VEECO MOCVD Heater

      VeTek Semiconductor is a leading manufacturer and supplier of VEECO MOCVD heater products in China. MOCVD heater has excellent chemical purity, thermal stability and corrosion resistance. It is an indispensable product in the metal organic chemical vapor deposition (MOCVD) process. Welcome to your further inquiries.
    • CVD TaC Coating Ring

      CVD TaC Coating Ring

      VeTek Semiconductor's CVD TaC Coating Ring is a highly advantageous component designed to meet the demanding requirements of silicon carbide (SiC) crystal growth processes. The CVD TaC Coating Ring provides outstanding high-temperature resistance and chemical inertness, making it an ideal choice for environments characterized by elevated temperatures and corrosive conditions.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
    • Silicon Carbide Epitaxy Wafer Carrier

      Silicon Carbide Epitaxy Wafer Carrier

      VeTek Semiconductor is a leading customized Silicon Carbide Epitaxy Wafer Carrier supplier in China.We have been specialized in advanced material more than 20 years.We offer a Silicon Carbide Epitaxy Wafer Carrier for carrying SiC substrate, growing SiC epitaxy layer in SiC epitaxial reactor. This Silicon Carbide Epitaxy Wafer Carrier is an important SiC coated part of halfmoon part, high temperature resistance, oxidation resistance, wear resistance. We welcome you to visit our factory in China.
    • Physical Vapor Deposition

      Physical Vapor Deposition

      Vetek semiconductor Physical Vapor Deposition (PVD) is an advanced process technology widely used in surface treatment and thin film preparation. PVD technology uses physical methods to directly transform materials from solid or liquid to gas and form a thin film on the surface of the target substrate. This technology has the advantages of high precision, high uniformity and strong adhesion, and is widely used in semiconductors, optical devices, tool coatings and decorative coatings. Welcome to discuss with us!
    • Related Blog
    • Reviews

    • Silicon(Si) epitaxy preparation technology

      Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

    • Tantalum carbide technology breakthrough, SiC epitaxial pollution reduced by 75%?

      Recently, the German research institute Fraunhofer IISB has made a breakthrough in the research and development of tantalum carbide coating technology, and developed a spray coating solution that is more flexible and environmentally friendly than the CVD deposition solution, and has been commercialized.

    • What is the difference between epitaxy and ALD?

      The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • Application of carbon-based thermal field materials in silicon carbide crystal growth

      Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

    • Why is SiC coating a key core material for SiC epitaxial growth?

      This article analyzes the reasons why SiC coating a key core material for SiC epitaxial growth and focuses on the specific advantages of SiC coating in the semiconductor industry.

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