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China RTP Process Manufacturer, Supplier, Factory

As a professional RTP Process manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable RTP Process made in China, you can leave us a message.

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  • Silicon Carbide Wafer Chuck

    Silicon Carbide Wafer Chuck

    As a leading manufacturer and supplier of Silicon Carbide Wafer Chuck products in China, VeTek Semiconductor's Silicon Carbide Wafer Chuck plays an irreplaceable role in the epitaxial growth process with its excellent high temperature resistance, chemical corrosion resistance and thermal shock resistance. Welcome your further consultation.
  • Porous Ceramic Vacuum Chuck

    Porous Ceramic Vacuum Chuck

    As a professional Porous Ceramic Vacuum Chuck manufacturer and supplier in China, Vetek Semiconductor's Porous Ceramic Vacuum Chuck is made of silicon carbide ceramic (SiC) material, which has excellent high temperature resistance, chemical stability and mechanical strength. It is an indispensable core component in the semiconductor manufacturing process. Welcome your further inquiries.
  • CVD SiC Coated Wafer Barrel Holder

    CVD SiC Coated Wafer Barrel Holder

    CVD SiC coated wafer Barrel holder is the key component of epitaxial growth furnace, widely used in MOCVD epitaxial growth furnaces. VeTek Semiconductor provides you with highly customized products. No matter what your needs are for CVD SiC coated wafer Barrel holder, Welcome to consult us.
  • SiC Cantilever Paddle

    SiC Cantilever Paddle

    VeTek Semiconductor's SiC Cantilever Paddle is a very high performance product. Our SiC Cantilever Paddle is usually used in heat treatment furnaces for handling and supporting silicon wafers, chemical vapor deposition (CVD) and other processing processes in semiconductor manufacturing processes. The high temperature stability and high thermal conductivity of SiC material ensure high efficiency and reliability in the semiconductor processing process. We are committed to providing high-quality products at competitive prices and look forward to becoming your long-term partner in China.
  • TaC Coated Chuck

    TaC Coated Chuck

    As a professional TaC Coated Chuck manufacturer and supplier in China, VeTek Semiconductor's TaC Coating Chuck is specifically designed for semiconductor furnaces. With its high temperature resistance, chemical inertness and excellent performance, Vetek Semiconductor's innovative technology provides a reliable solution for the semiconductor manufacturing industry to ensure hig-quality production standards. We believe that our products can bring you advanced technology and high-quality product solutions.
  • High purity CVD SiC raw material

    High purity CVD SiC raw material

    High purity CVD SiC raw material prepared by CVD is the best source material for silicon carbide crystal growth by physical vapor transport. The density of High purity CVD SiC raw material supplied by VeTek Semiconductor is higher than that of small particles formed by spontaneous combustion of Si and C-containing gases, and it does not require a dedicated sintering furnace and has a nearly constant evaporation rate. It can grow extremely high quality SiC single crystals. Looking forward to your inquiry.
  • Related Blog
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  • The Development History of 3C SiC

    Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • How to achieve high quality crystal growth? - SiC crystal growth furnace

    With the theme of "How to achieve high quality crystal growth? - SiC crystal growth furnace", this blog conducts a detailed analysis from four dimensions: the basic principle of silicon carbide crystal growth furnace, the structure of the silicon carbide crystal growth furnace, technical difficulties of silicon carbide crystal growth furnace, and raw materials for growing high-quality SiC crystals.

  • ALD Atomic Layer Deposition Recipe

    Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

  • What is an EPI Epitaxial Furnace? - VeTek Semiconductor

    The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

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