SiC Cantilever Paddle

VeTek Semiconductor's SiC Cantilever Paddle is a very high performance product. Our SiC Cantilever Paddle is usually used in heat treatment furnaces for handling and supporting silicon wafers, chemical vapor deposition (CVD) and other processing processes in semiconductor manufacturing processes. The high temperature stability and high thermal conductivity of SiC material ensure high efficiency and reliability in the semiconductor processing process. We are committed to providing high-quality products at competitive prices and look forward to becoming your long-term partner in China.

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Product Description

You are welcomed to come to our factory Vetek Semiconductor to buy the latest selling, low price, and high-quality SiC Cantilever Paddle. We look forward to cooperating with you.

VeTek Semiconductor's SiC Cantilever Paddle Features:

High Temperature Stability: Able to maintain its shape and structure at high temperatures, suitable for high temperature processing processes.

Corrosion Resistance: Excellent corrosion resistance to a variety of chemicals and gases.

High strength and rigidity: Provides reliable support to prevent deformation and damage.

Advantages of VeTek Semiconductor's SiC Cantilever Paddle:

High precision: High processing accuracy ensures stable operation in automated equipment.

Low contamination: High-purity SiC material reduces the risk of contamination, which is especially important for ultra-clean manufacturing environments.

High mechanical properties: Able to withstand harsh working environments with high temperatures and high pressures.

Specific applications of SiC Cantilever Paddle and its application principle

Silicon wafer handling in semiconductor manufacturing:

SiC Cantilever Paddle is mainly used to handle and support silicon wafers during semiconductor manufacturing. These processes usually include cleaning, etching, coating and heat treatment. Application principle:

Silicon wafer handling: SiC Cantilever Paddle is designed to safely clamp and move silicon wafers. During high temperature and chemical treatment processes, the high hardness and strength of SiC material ensure that the silicon wafer will not be damaged or deformed.

Chemical Vapor Deposition (CVD) process:

In the CVD process, SiC Cantilever Paddle is used to carry silicon wafers so that thin films can be deposited on their surfaces. Application principle:

In the CVD process, the SiC Cantilever Paddle is used to fix the silicon wafer in the reaction chamber, and the gaseous precursor decomposes at high temperature and forms a thin film on the surface of the silicon wafer. The chemical corrosion resistance of SiC material ensures stable operation under high temperature and chemical environment.

Product parameter of the SiC Cantilever Paddle

Physical properties of Recrystallized Silicon Carbide
Property	Typical Value
Working temperature (°C)	1600°C (with oxygen), 1700°C (reducing environment)
SiC content	> 99.96%
Free Si content	< 0.1%
Bulk density	2.60-2.70 g/cm3
Apparent porosity	< 16%
Compression strength	> 600 MPa
Cold bending strength	80-90 MPa (20°C)
Hot bending strength	90-100 MPa (1400°C)
Thermal expansion @1500°C	4.70 10-6/°C
Thermal conductivity @1200°C	23 W/m•K
Elastic modulus	240 GPa
Thermal shock resistance	Extremely good