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    • China Rigid Felt Crucible Manufacturer, Supplier, Factory

    As a professional Rigid Felt Crucible manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Rigid Felt Crucible made in China, you can leave us a message.

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    • CVD SiC coating Epitaxy susceptor

      CVD SiC coating Epitaxy susceptor

      VeTek Semiconductor's CVD SiC Coating Epitaxy Susceptor is a precision-engineered tool designed for semiconductor wafer handling and processing. This SiC Coating Epitaxy Susceptor plays a vital role in promoting the growth of thin films, epilayers, and other coatings, and can precisely control temperature and material properties. Welcome your further inquiries.
    • TaC Coating Chuck

      TaC Coating Chuck

      VeTek Semiconductor's TaC Coating Chuck features a high-quality TaC coating,known for its outstanding high-temperature resistance and chemical inertness, particularly in silicon carbide (SiC) epitaxy(EPI) processes. With its exceptional features and superior performance, our TaC Coating Chuck offers several key advantages.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
    • SiC coated wafer carrier

      SiC coated wafer carrier

      As a leading SiC coated wafer carrier supplier and manufacturer in China, VeTek Semiconductor's SiC coated wafer carrier is made of high-quality graphite and CVD SiC coating, which has super stability and can work for a long time in most epitaxial reactors. VeTek Semiconductor has industry-leading processing capabilities and can meet customers' various customized requirements for SiC coated wafer carriers. VeTek Semiconductor looks forward to establishing a long-term cooperative relationship with you and growing together.
    • SiC Coating Cover Segments

      SiC Coating Cover Segments

      Vetek Semiconductor is dedicated to the advancement and commercialization of CVD SiC coating and CVD TaC coating. As an illustration, our SiC Coating Cover Segments undergoes meticulous processing, resulting in a dense CVD SiC coating with exceptional precision. It exhibits remarkable resistance to high temperatures and offers robust protection against corrosion. We welcome your inquiries.
    • SiC Coated Barrel Susceptor

      SiC Coated Barrel Susceptor

      VeTek Semiconductor offers a comprehensive set of component solutions for LPE silicon epitaxy reaction chambers, delivering long lifespan, stable quality, and improved epitaxial layer yield. Our product such as SiC Coated Barrel Susceptor received position feedback from customers. We also provide technical support for Si Epi, SiC Epi, MOCVD, UV-LED Epitaxy, and more. Feel free to inquire for pricing information.
    • Graphite Rotating Susceptor

      Graphite Rotating Susceptor

      High purity graphite rotating susceptor plays an important role in the epitaxial growth of gallium nitride (MOCVD process). VeTek Semiconductor is a leading graphite rotating susceptor manufacturer and supplier in China. We have developed many high-purity graphite products based on high-purity graphite materials, which fully meet the requirements of the semiconductor industry. VeTek Semiconductor looks forward to becoming your partner in Rotating Graphite susceptor.
    • Related Blog
    • Reviews

    • Thermal Field Design for SiC Single Crystal Growth

      With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

    • How to prepare CVD TaC coating?

      This article introduces the product characteristics of CVD TaC coating, the process of preparing CVD TaC coating using the CVD method, and the basic method for surface morphology detection of the prepared CVD TaC coating.

    • Based on 8-inch silicon carbide single crystal growth furnace technology

      Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

    • Why does 3C-SiC stand out among many SiC polymorphs? - VeTek Semiconductor

      Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.

    • What are the differences between MBE and MOCVD technologies?

      This article mainly discusses the respective process advantages and differences of Molecular Beam Epitaxy process and Metal-organic chemical vapour deposition technologies.

    • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

      In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

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