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    • China Graphite Hard felt Manufacturer, Supplier, Factory

    As a professional Graphite Hard felt manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Graphite Hard felt made in China, you can leave us a message.

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    • MOCVD Epitaxial Susceptor for 4

      MOCVD Epitaxial Susceptor for 4" Wafer

      VeTek Semiconductor is a professional manufacturer and supplier, who is dedicated to providing high-quality MOCVD Epitaxial Susceptor for 4" Wafer. with rich industry experience and a professional team, we are able to deliver expert and efficient solutions to our clients.
    • 4 Inch Insulation Rigid Felt - Body

      4 Inch Insulation Rigid Felt - Body

      4 Inch Insulation Rigid Felt - Body provided by VeTek Semiconductor is a rigid insulation material made of high-quality carbon fiber material. It has excellent insulation performance and durability. It can effectively insulate heat, sound and shock, and is suitable for a variety of applications. VeTek Semiconductor looks forward to establishing a long-term cooperative relationship with you and becoming a partner in the global market.
    • SiC Coated Top Plate for LPE PE2061S

      SiC Coated Top Plate for LPE PE2061S

      VeTek Semiconductor is a leading SiC Coated Top Plate for LPE PE2061S manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC Coated Top Plate for LPE PE2061S designed specifically for LPE silicon epitaxy reactor. This SiC Coated Top Plate for LPE PE2061S is the top together with barrel susceptor.This CVD SiC coated plate boasts high purity, excellent thermal stability, and uniformity, making it suitable for growing high-quality epitaxial layers.We welcome you to visit our factory in China.
    • TaC coated wafer susceptor

      TaC coated wafer susceptor

      eTek Semiconductor TaC Coated Wafer Susceptor is a graphite tray coated with tantalum carbide for silicon carbide epitaxial growth to improve wafer quality and performance. VeTek is selected because of its advanced coating technology and durable solutions to ensure excellent SiC epitaxy results and extended susceptor life, welcome your further inquiries.
    • Tantalum Carbide Ring

      Tantalum Carbide Ring

      As an advanced manufacturer and producer of Tantalum Carbide Ring products in China, VeTek Semiconductor Tantalum Carbide Ring has extremely high hardness, wear resistance, high temperature resistance and chemical stability, and is widely used in the semiconductor manufacturing field. Especially in CVD, PVD, ion implantation process, etching process, and wafer processing and transportation, it is an indispensable product for semiconductor processing and manufacturing. Looking forward to your further consultation.
    • TaC Coated Graphite Susceptor

      TaC Coated Graphite Susceptor

      VeTek Semiconductor’s TaC Coated Graphite Susceptor uses chemical vapor deposition(CVD) method to prepare tantalum carbide coating on the surface of graphite parts. This process is the most mature and has the best coating properties. TaC Coated Graphite Susceptor can extend the service life of graphite components, inhibit the migration of graphite impurities, and ensure the quality of epitaxy. VeTek Semiconductor is looking forward to your inquiry.
    • Related Blog
    • Reviews

    • Roll up! Two major manufacturers are about to mass produce 8-inch silicon carbide

      As the 8-inch silicon carbide (SiC) process matures, manufacturers are accelerating the shift from 6-inch to 8-inch. Recently, ON Semiconductor and Resonac announced updates on 8-inch SiC production.

    • The Problems in the Etching Process

      Etching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, designing reasonable lithography layout, and selecting appropriate etching mask materials and process conditions.

    • Different technical routes of SiC epitaxial growth furnace

      Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

    • Application of carbon-based thermal field materials in silicon carbide crystal growth

      Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

    • Silicon(Si) epitaxy preparation technology

      Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

    • Italy's LPE's 200mm SiC epitaxial technology progress

      This article introduces the latest developments in the newly designed PE1O8 hot-wall CVD reactor of the Italian company LPE and its ability to perform uniform 4H-SiC epitaxy on 200mm SiC.

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