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  • Pancake Susceptor based SiC coated

    • China Pancake Susceptor based SiC coated Manufacturer, Supplier, Factory

    As a professional Pancake Susceptor based SiC coated manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Pancake Susceptor based SiC coated made in China, you can leave us a message.

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    • High Purity Porous Graphite

      High Purity Porous Graphite

      High Purity Porous Graphite provided by VeTek Semiconductor is an advanced semiconductor processing material. It is made of high-purity carbon material with excellent thermal conductivity, good chemical stability and excellent mechanical strength. This High Purity Porous Graphite plays an important role in the growth process of single crystal SiC. VeTek Semiconductor is committed to providing quality products at competitive prices and looks forward to becoming your long-term partner in China.
    • CVD SiC coating Epitaxy susceptor

      CVD SiC coating Epitaxy susceptor

      VeTek Semiconductor's CVD SiC Coating Epitaxy Susceptor is a precision-engineered tool designed for semiconductor wafer handling and processing. This SiC Coating Epitaxy Susceptor plays a vital role in promoting the growth of thin films, epilayers, and other coatings, and can precisely control temperature and material properties. Welcome your further inquiries.
    • CVD TaC coating planetary SiC epitaxial susceptor

      CVD TaC coating planetary SiC epitaxial susceptor

      CVD TaC coating planetary SiC epitaxial susceptor is one of the core components of MOCVD planetary reactor. Through CVD TaC coating planetary SiC epitaxial susceptor, the large disk orbits and the small disk rotates, and the horizontal flow model is extended to multi-chip machines, so that it has both the high-quality epitaxial wavelength uniformity management and defect optimization of single-chip machines and the production cost advantages of multi-chip machines.VeTek Semiconductor can provide customers with highly customized CVD TaC coating planetary SiC epitaxial susceptor. If you also want to make a planetary MOCVD furnace like Aixtron, come to us!
    • Tantalum Carbide TaC Coated Halfmoon

      Tantalum Carbide TaC Coated Halfmoon

      VeTek Semiconductor is the leading manufacturer and supplier in China for Tantalum Carbide TaC Coated Halfmoon, we specialized in R&D and production,can control the quality well and offer a competitive price. You are welcome to visit our factory for further discussion on a long-term cooperation.
    • SiC Coated Graphite Barrel Susceptor for EPI

      SiC Coated Graphite Barrel Susceptor for EPI

      VeTek Semiconductor is a professional manufacturer, supplier and exporter for the SiC coated graphite barrel susceptor for EPI. Supported by a professional team and leading technology, VeTek Semiconductor can provide you high quality at reasonable prices. we welcome you to visit our factory for further discussion.
    • SiC Sealing Part

      SiC Sealing Part

      As an advanced SiC Sealing Part product manufacturer and factory in China. VeTek Semiconducto SiC Sealing Part is a high-performance sealing component widely used in semiconductor processing and other extreme high temperature and high pressure processes. Welcome your further consultation.
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    • The Problems in the Etching Process

      Etching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, designing reasonable lithography layout, and selecting appropriate etching mask materials and process conditions.

    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • The Development History of 3C SiC

      Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

    • Do you know about MOCVD Susceptor?

      This article mainly introduces the product types, product characteristics and main functions of MOCVD Susceptor in semiconductor processing, and makes a comprehensive analysis and interpretation of MOCVD Susceptor products as a whole.

    • How to solve the problem of sintering cracks in silicon carbide ceramics? - VeTek semiconductor

      This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

    • Porous Tantalum Carbide: A new generation of materials for SiC crystal growth

      VeTek Semiconductor's Porous Tantalum Carbide, as a new generation of SiC crystal growth material, has many excellent product properties and plays a key role in a variety of semiconductor processing technologies.

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