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    • China Ash contents below 5ppm Manufacturer, Supplier, Factory

    As a professional Ash contents below 5ppm manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Ash contents below 5ppm made in China, you can leave us a message.

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    • CVD TaC Coating Cover

      CVD TaC Coating Cover

      CVD TaC coating cover provided by VeTek Semiconductor is a highly specialized component designed specifically for demanding applications. With its advanced features and exceptional performance, our CVD TaC coating cover offers several key advantages.Our CVD TaC coating cover provides the necessary protection and performance required for success.We looking forward to exploring potential cooperation with you!
    • Quartz Wafer Boat

      Quartz Wafer Boat

      As a professional quartz wafer boat manufacturer and supplier in China, Vetek Semiconductor Quartz Wafer Boat is designed to exceed industry standards and optimize your production process. Our quartz wafer boats are carefully designed and highly reliable to meet the stringent requirements of the semiconductor industry. Vetek Semiconductor is committed to providing advanced technology and product solutions for the semiconductor industry. We welcome your further inquiries.
    • Semiconductor Susceptor Block SiC Coated

      Semiconductor Susceptor Block SiC Coated

      VeTek Semiconductor's Semiconductor susceptor block SiC coated is a highly reliable and durable device. It is designed to withstand high temperatures and harsh chemical environments while maintaining stable performance and a long lifespan. With its excellent process capabilities, the Semiconductor Susceptor Block SiC Coated reduces the frequency of replacement and maintenance, thus improving production efficiency. We look forward to the opportunity to collaborate with you.
    • SiC Coated Epi Susceptor

      SiC Coated Epi Susceptor

      As the top domestic manufacturer of silicon carbide and tantalum carbide coatings, VeTek Semiconductor is able to provide precision machining and uniform coating of SiC Coated Epi Susceptor, effectively controlling the purity of coating and product below 5ppm. The product life is comparable to that of SGL. Welcome to inquire us.
    • Wafer Carrier Tray

      Wafer Carrier Tray

      Vetek Semiconductor specializes in partnering with its customers to produce custom designs for Wafer Carrier Tray. Wafer Carrier tray can be designed for use in CVD silicon epitaxy, III-V epitaxy, and III-Nitride epitaxy, Silicon carbide epitaxy. Please contact Vetek semiconductor regarding your susceptor requirements.
    • TaC Coating Pedestal Support Plate

      TaC Coating Pedestal Support Plate

      VeTek Semiconductor's TaC Coating Pedestal Support Plate is a high-precision product designed to meet the specific requirements of semiconductor epitaxy processes. With its TaC coating, high-temperature resistance, and chemical inertness, our product empowers you to produce high-quality EPI layers with high quality. We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
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    • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

      SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

    • Different technical routes of SiC epitaxial growth furnace

      Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

    • 8-inch SiC epitaxial furnace and homoepitaxial process research

      8-inch SiC epitaxial furnace and homoepitaxial process research

    • What is the difference between epitaxy and ALD?

      The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

    • Chinese companies are reportedly developing 5nm chips with Broadcom!

      According to overseas news, two sources revealed on June 24 that ByteDance is working with US chip design company Broadcom to develop an advanced artificial intelligence (AI) computing processor, which will help ByteDance ensure an adequate supply of high-end chips amid tensions between China and the United States.

    • Silicon(Si) epitaxy preparation technology

      Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

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