China Barrel Susceptor for LPE PE2061S Manufacturer, Supplier, Factory

The material of silicon carbide epitaxial layer is silicon carbide, which is usually used to manufacture high-power electronic devices and LEDs. It is widely used in the semiconductor industry due to its excellent thermal stability, mechanical strength and high electrical conductivity.

Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

This article first introduces the molecular structure and physical properties of TaC, and focuses on the differences and applications of sintered tantalum carbide and CVD tantalum carbide, as well as VeTek Semiconductor's popular TaC coating products.

In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

This article describes the physical parameters and product characteristics of VeTek Semiconductor's Porous Graphite, as well as its specific applications in semiconductor processing.