The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal ......
Read MoreChemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and goo......
Read MoreThis article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.
Read MoreEtching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, ......
Read MoreHot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the ad......
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