TaC Coating Chuck

VeTek Semiconductor's TaC Coating Chuck features a high-quality TaC coating,known for its outstanding high-temperature resistance and chemical inertness, particularly in silicon carbide (SiC) epitaxy(EPI) processes. With its exceptional features and superior performance, our TaC Coating Chuck offers several key advantages.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.

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Product Description

VeTek Semiconductor's TaC Coating Chuck is the ideal solution for achieving exceptional results in SiC EPI process. With its TaC coating, high-temperature resistance, and chemical inertness, our product empowers you to produce high-quality crystals with precision and reliability.Welcome to inquiry us.

TaC (tantalum carbide) is a material commonly used to coat the surface of internal parts of epitaxial equipment. It has the following characteristics:

Excellent high temperature resistance: TaC coatings can withstand temperatures up to 2200°C, making them ideal for applications in high temperature environments such as epitaxial reaction chambers.

High hardness: The hardness of TaC reaches about 3000-4000 HV, which is much harder than commonly used stainless steel or aluminum alloy, which can effectively prevent surface wear.

Strong chemical stability: TaC coating performs well in chemically corrosive environments and can greatly extend the service life of epitaxial equipment components.

Good electrical conductivity: TaC coating has good electrical conductivity, which is conducive to electrostatic release and heat conduction.

These properties make TaC coating an ideal material for manufacturing critical parts such as internal bushings, reaction chamber walls, and heating elements for epitaxial equipment. By coating these components with TaC, the overall performance and service life of the epitaxial equipment can be improved.

For silicon carbide epitaxy, TaC coating chunk can also play an important role. The surface of TaC coating is smooth and dense, which is conducive to the formation of high-quality silicon carbide films. At the same time, the excellent thermal conductivity of TaC can help improve the uniformity of the temperature distribution inside the equipment, thereby improving the temperature control accuracy of the epitaxial process, and ultimately achieving higher quality silicon carbide epitaxial layer growth.

Product parameter of the TaC Coating Chunk:

Physical properties of TaC coating
Density	14.3 (g/cm³)
Specific emissivity	0.3
Thermal expansion coefficient	6.3 10-6/K
Hardness (HK)	2000 HK
Resistance	1×10-5 Ohm*cm
Thermal stability	<2500℃
Graphite size changes	-10~-20um
Coating thickness	≥20um typical value (35um±10um)